Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Not Accessible

Your library or personal account may give you access

Abstract

A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.

© 2005 Optical Society of America

Full Article  |  PDF Article
More Like This
Transfer of micro-optical structures into GaAs by use of inductively coupled plasma dry etching

Mikael Karlsson and Fredrik Nikolajeff
Appl. Opt. 41(5) 902-908 (2002)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (6)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved