Abstract
A lateral polysilicon Bipolar Charge Plasma Transistor
(poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is
compatible with the thin-film field effect transistor (TFT) fabrication is
reported in this paper. Using calibrated two-dimensional device simulation,
the electrical performance of the poly-Si BCPT is evaluated in detail by considering
the position of the single grain boundary. Our simulation results demonstrate
that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline
silicon bipolar transistors with large current gain and cut-off frequency
making it suitable for a number of applications including the driver circuits
of the displays.
© 2014 IEEE
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