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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 7,
  • pp. 590-594
  • (2014)

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

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Abstract

A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.

© 2014 IEEE

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