Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 8,
  • pp. 660-665
  • (2014)

Top Down Scale-Up of Semiconducting Nanostructures for Large Area Electronics

Not Accessible

Your library or personal account may give you access

Abstract

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1 $\times$ 1 ${{cm}}^{2}$ area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.

© 2014 IEEE

PDF Article
More Like This
Large-scale fabrication of ordered metallic hybrid nanostructures

X. Chen, X. Wei, and K. Jiang
Opt. Express 16(16) 11888-11893 (2008)

Top-down convergence of near-infrared photonics with silicon substrate-integrated electronics

Martino Bernard, Fabio Acerbi, Giovanni Paternoster, Gioele Piccoli, Luca Gemma, Davide Brunelli, Alberto Gola, Georg Pucker, Lucio Pancheri, and Mher Ghulinyan
Optica 8(11) 1363-1364 (2021)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved