Abstract

We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 μm in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.

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History
Original Manuscript: August 3, 2009
Revised Manuscript: September 28, 2009
Manuscript Accepted: October 6, 2009
Published: October 16, 2009

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Author Affiliations

Radoslaw Stanowski, Matthieu Martin, Jan J. Dubowski

Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada

Richard Ares

Department of Mechanical Engineering, Center of Excellence for Information Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada

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