Abstract

Frequency selectivity of a novel type of multielement, multisection laterally coupled semiconductor laser array is studied using the round-trip method. It is found that such a structure should lead to a strong frequency selectivity owing to a periodic dependency of the threshold gain on the frequency. A gain-guided two-coupled-cavity device was fabricated. The experimental results show excellent agreement with the theoretical prediction.

© 1991 Optical Society of America

Frequency selectivity in laterally coupled semiconductor laser arrays

J. Salzman, R. Lang, and A. Yariv
Opt. Lett. 10(8) 387-389 (1985)

Lateral and longitudinal coupled waveguides in semiconductor lasers

Orit Skorka and Joseph Salzman
Opt. Lett. 28(20) 1939-1941 (2003)

Modal analysis of linear Talbot-cavity semiconductor lasers

David Mehuys, William Streifer, Robert G. Waarts, and David F. Welch
Opt. Lett. 16(11) 823-825 (1991)

Lateral inhibitory action in an optical neural network using an internal-light-coupled optical device array

Wataru Kawakami, Ken-ichi Kitayama, Yoshinori Nakano, and Masahiro Ikeda
Opt. Lett. 16(13) 1028-1030 (1991)

Effect of phase-conjugate feedback on semiconductor laser dynamics

Govind P. Agrawal and Jeffrey T. Klaus
Opt. Lett. 16(17) 1325-1327 (1991)