Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Progress towards laser cooling in semiconductors

Not Accessible

Your library or personal account may give you access

Abstract

We describe a mechanism for cooling semiconductors via laser excitation, radiative recombination, and efficient coupling of the emitted light. Preliminary experimental results on lattice matched InGaAs/InP with an indexmatching silicon lens are presented. The external radiative efficiency of the structure is approximately 49% at room temperature, a record high for spontaneous emission at this technologically important wavelength (1.6 µm coincides with a major optical communications band). While this efficiency is well below that required for refrigeration, extrapolation to 77K bodes well for laser cooling in this device.

© 1998 Optical Society of America

PDF Article
More Like This
Prospects for Laser Cooling of Semiconductors

M. Sheik-Bahae, M.P. Hasselbeck, and R.I. Epstein
QTuH6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2002

Laser cooling in semiconductors: is it possible?

B. Imangholi, M. P. Hasselbeck, M. Sheik-Bahae, R. I. Epstein, and S. Kurtz
IMO6 International Quantum Electronics Conference (IQEC) 2004

Nonlinear Processes in Laser Cooling of Semiconductors

M. Sheik-Bahae, B. Imangholi, M. P. Hasselbeck, R. I. Epstein, and S. Kurtz
TuC7 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2004

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved