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The electrical performance of the F16CuPc/α6T TFT was also studied, illuminated by a visible light from a white LED and the performance of the device as a phototransistor. As the illumination intensity is increased from 0 to 3.0 k Lux, the hole mobility decreases to about 1/3, while the electron mobility is only slightly increased. The mechanism of light enhanced photocurrent of n-channel is based on photoinduced charge transfer by donor semiconductor (F16CuPc). The drain current is significantly increased (n-channel) or decreased (p-channel) by a light is used as an additional control parameter, making the device interesting for sensor applications.
© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC
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