Abstract
Absorption of InGaN alloy with graded In composition nearly perfectly matches the solar spectrum and is a good candidate for solar cell. Unfortunately, epitaxy and doping of p-type InGaN, in particular the high In composition is difficult. In this talk, we will report the growth of random InGaN alloy. In addition, to improve crystalline quality of InGaN, digital InGaN alloy is proposed and the experimental result will be reported as well.
© 2014 Optical Society of America
PDF ArticleMore Like This
Ke Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, W. Walukiewicz, and Y. Nanishi
WH4_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
X.Q. Wang, X.T. Zheng, P. Wang, D.Y. Ma, B. Shen, T. Schulz, and M. Albrecht
PW2E.2 Photonics for Energy (PE) 2015
Tsung-Hsiao Lin, Ching-Hua Li, and Sheng-Hui Chen
JW6A.17 Optical Instrumentation for Energy and Environmental Applications (ES) 2014