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Epitaxy of InGaN random and digital alloys towards solar cells

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Abstract

Absorption of InGaN alloy with graded In composition nearly perfectly matches the solar spectrum and is a good candidate for solar cell. Unfortunately, epitaxy and doping of p-type InGaN, in particular the high In composition is difficult. In this talk, we will report the growth of random InGaN alloy. In addition, to improve crystalline quality of InGaN, digital InGaN alloy is proposed and the experimental result will be reported as well.

© 2014 Optical Society of America

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