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Conference Paper
Advances in Optical Materials
San Jose, California United States
October 14-15, 2009
ISBN: 978-1-55752-878-0
Semiconductor Materials (AWA)

Photoluminescence of Magnetic Ion Doped Nanostructured Indium Tin Oxide Films

Prasanta K. Biswas, Susmita Kundu, Sunirmal Jana, Nilanjana Das, and Dipten Bhattacharya

http://dx.doi.org/10.1364/AIOM.2009.AWA4


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Abstract

Sol-gel based undoped and Cr(III)-, Mn(II)-doped quantum sized (2.5-15nm) indium tin oxide films were prepared. Photoluminescence intensity at ~395 nm for free exciton gradually decreases with increase in nanoclustered size for all films except Mn(II)-doped.

© 2009 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties

Citation
P. K. Biswas, S. Kundu, S. Jana, N. Das, and D. Bhattacharya, "Photoluminescence of Magnetic Ion Doped Nanostructured Indium Tin Oxide Films," in Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, OSA Technical Digest (CD) (Optical Society of America, 2009), paper AWA4.
http://www.opticsinfobase.org/abstract.cfm?URI=AIOM-2009-AWA4


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