Controllable light utilization in silicon-based-thin-film solar cells with a DBR structure have been simulated. A experimental model cells constructed by a-Si pin/ZnO (~70nm)/P<sup>+</sup>?c-Si(20nm) were verified. The ratio of I<sup>sc</sup>increment can be reached to 14.1%.
© 2008 The Optical Society
Y. Zhao, P. Chen, X. Zhang, N. Cai, X. Geng, and S. Xiong, "Controllable Light Utilization in Silicon-Based Thin Film Solar Cells," in Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, OSA Technical Digest (CD) (Optical Society of America, 2008), paper FE2.
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