Abstract

Two dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS₂), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of dichalcogenide family and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS₂), a type of non-transition metal dichalcogenide. The carrier mobility of our monolayer devices reaches 50 cm²/Vs, comparable or higher than that of MoS₂ counterparts (15-55 cm²/Vs). The superior electrical properties make monolayer SnS₂ a strong candidate for next-generation atomic nanoelectronics and flexible devices.

© 2013 Optical Society of America