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Conference Paper
Advanced Optoelectronics for Energy and Environment
Wuhan China
May 25-26, 2013
ISBN: 978-1-55752-976-3
Solar Cells II (ASa4A)

Triple-junction P-I-N and N-I-P Type Thin Film Silicon Solar Cells Based on High-rate Microcrystalline Silicon

xiaodan Zhang, Lisha Bai, Qian Huang, and Ying Zhao  »View Author Affiliations


http://dx.doi.org/10.1364/AOEE.2013.ASa4A.4


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Abstract

We have developed the a-Si/a-SiGe/μc-Si triple-junction p-i-n and n-i-p solar cells with around 13% initial conversion efficiency by incorporating device-quality intrinsic hydrogenated microcrystalline silicon (μc-Si:H) thin films under a high deposition rate of above 1.5nm/s.

© 2013 OSA

OCIS Codes
(310.6870) Thin films : Thin films, other properties
(350.6050) Other areas of optics : Solar energy
(310.6845) Thin films : Thin film devices and applications

Citation
x. Zhang, L. Bai, Q. Huang, and Y. Zhao, "Triple-junction P-I-N and N-I-P Type Thin Film Silicon Solar Cells Based on High-rate Microcrystalline Silicon," in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013), paper ASa4A.4.
http://www.opticsinfobase.org/abstract.cfm?URI=AOEE-2013-ASa4A.4


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