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Conference Paper
Advanced Semiconductor Lasers and Their Applications
Santa Barbara, California United States
July 21, 1999
ISBN: 1-55752-605-2
Novel Semiconductor Lasers (NSL)

Narrow-linewidth complex-coupled DFB lasers with gain coupling induced by vertical emission

Nguyen Hong Ky, J. Robadey, J. -D. Ganière, C. Gourgon, D. Martin, B. Deveaud, and F. K. Reinhart

http://dx.doi.org/10.1364/ASLA.1999.178


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Abstract

InGaAs quantum-well complex-coupled DFB lasers with gain coupling induced by vertical emission are demonstrated. Continuous-wave operation of these lasers at room temperature provides single-mode emission at a wavelength around 980 nm. A spectral linewidth as narrow as 15 MHz and a side-mode suppression ratio larger than 40 dB are obtained. The use of this gain coupling mechanism permits to reduce the influence of the regrown interface quality on the laser performance.

© 2000 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
N. Hong Ky, J. Robadey, J. -. Ganière, C. Gourgon, D. Martin, B. Deveaud, and F. K. Reinhart, "Narrow-linewidth complex-coupled DFB lasers with gain coupling induced by vertical emission," in Advanced Semiconductor Lasers and Their Applications, L. Hollberg and R. Lang, eds., Vol. 31 of OSA Trends in Optics and Photonics (Optical Society of America, 1999), paper 178.
http://www.opticsinfobase.org/abstract.cfm?URI=ASLA-1999-178


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