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Conference Paper
Advanced Semiconductor Lasers and Their Applications
Santa Barbara, California United States
July 21, 1999
ISBN: 1-55752-605-2
Microwave and Frequency-Conversion Devices (MFCD)

Faraday-configured mode-locked p-Ge laser and p-Ge far-infrared amplifier

R. E. Peale, A. V. Muravjov, S. H. Withers, and R. C. Strijbos

http://dx.doi.org/10.1364/ASLA.1999.96


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Abstract

A solid-state broad-band amplifier of far-infrared radiation (1.5 - 4.2 THz) based on intersubband transitions of hot holes in p-Ge is demonstrated using two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usual for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Active mode locking of the p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields with distinct advantages over Voigt geometry. The 200 ps pulses of 80-110 cm-1 radiation were achieved by local gain modulation from an applied rf electric field at the 454 MHz round trip frequency of the laser cavity.

© 2000 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.3280) Lasers and laser optics : Laser amplifiers
(140.4050) Lasers and laser optics : Mode-locked lasers

Citation
R. E. Peale, A. V. Muravjov, S. H. Withers, and R. C. Strijbos, "Faraday-configured mode-locked p-Ge laser and p-Ge far-infrared amplifier," in Advanced Semiconductor Lasers and Their Applications, L. Hollberg and R. Lang, eds., Vol. 31 of OSA Trends in Optics and Photonics (Optical Society of America, 1999), paper 96.
http://www.opticsinfobase.org/abstract.cfm?URI=ASLA-1999-96


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