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Conference Paper
Advanced Solid State Lasers
Boston, Massachusetts United States
January 31, 1999
Poster Session III (TuB)

Highly trivalent neodymium ion doped YAG ceramic for microchip lasers

Takunori Taira, Sunao Kurimura, Jiro Saikawa, Akio Ikesue, and Kunio Yoshida

http://dx.doi.org/10.1364/ASSL.1999.TuB3


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Abstract

The spectroscopic and thermal properties of the trivalent neodymium doped YAG ceramic polycrystal line are analyzed in detail and cw operation of a diode-pumped microchip laser is reported. Strong absorption coefficient at 808 nm and large thermal conductivity are realized in the highly Nd-doped YAG ceramic polycrystal line. Up to 122 mW output power 24.5% slope efficiency was obtained on the 4.8 at.% Nd-doped YAG ceramic microchip laser, which corresponded to four times enhancement of the 0.9 at.% Nd:YAG single crystal microchip laser.

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium

Citation
T. Taira, S. Kurimura, J. Saikawa, A. Ikesue, and K. Yoshida, "Highly trivalent neodymium ion doped YAG ceramic for microchip lasers," in Advanced Solid State Lasers, M. Fejer, H. Injeyan, and U. Keller, eds., Vol. 26 of OSA Trends in Optics and Photonics (Optical Society of America, 1999), paper TuB3.
http://www.opticsinfobase.org/abstract.cfm?URI=ASSL-1999-TuB3


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