1064 nm Single Pulse Dependence of Silicon Carbide Ablation Threshold in Picosecond Regime

Brian Baird; Tim D. Gerke

doi:10.1364/ASSL.2014.ATh1A.5

Advanced Solid State Lasers
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper ATh1A.5
•https://doi.org/10.1364/ASSL.2014.ATh1A.5

1064 nm Single Pulse Dependence of Silicon Carbide Ablation Threshold in Picosecond Regime

Brian Baird and Tim D. Gerke

Advanced Solid State Lasers 2014

Shanghai China
16–21 November 2014
ISBN: 978-1-55752-822-3

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Micro-Machining of Dielectric Materials and Other Advance Laser Applications (ATh1A)

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B. Baird and T. D. Gerke, "1064 nm Single Pulse Dependence of Silicon Carbide Ablation Threshold in Picosecond Regime," in Advanced Solid State Lasers, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper ATh1A.5.

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Abstract

Variable pulsewidth picosecond master oscillator fiber power fiber amplifier lasers emitting at 1064 nm were used to determine the single pulse ablation threshold of Hexoloy SG silicon carbide ceramic in the picosecond regime.

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