We report high power single-frequency laser operation at λ = 1003 nm of an optically pumped external-cavity semiconductor laser in which the gain structure is bonded to a SiC heatspreader. Intracavity frequency-doubling is also demonstrated.
© 2006 Optical Society of America
M. Domenech, M. Jacquemet, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, " 1003 nm Single-Frequency High-Power Optically Pumped Semiconductor Laser," in Advanced Solid-State Photonics, Technical Digest (Optical Society of America, 2006), paper TuB15.
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