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Conference Paper
Advanced Solid-State Photonics
Incline Village, Nevada United States
January 29, 2006
ISBN: 1-55752-798-9
Poster Session II (TuB)

1003 nm Single-Frequency High-Power Optically Pumped Semiconductor Laser

Manuela Domenech, Mathieu Jacquemet, Gaelle Lucas-Leclin, Patrick Georges, Julie Dion, Martin Strassner, Isabelle Sagnes, and Arnaud Garnache

http://dx.doi.org/10.1364/ASSP.2006.TuB15


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Abstract

We report high power single-frequency laser operation at λ = 1003 nm of an optically pumped external-cavity semiconductor laser in which the gain structure is bonded to a SiC heatspreader. Intracavity frequency-doubling is also demonstrated.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
M. Domenech, M. Jacquemet, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, " 1003 nm Single-Frequency High-Power Optically Pumped Semiconductor Laser," in Advanced Solid-State Photonics, Technical Digest (Optical Society of America, 2006), paper TuB15.
http://www.opticsinfobase.org/abstract.cfm?URI=ASSP-2006-TuB15


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