We present the first experiment of intracavity pumping at 914nm of an Yb:S-FAP crystal emitting at 985nm on the three-level-laser transition. We obtained 250mW output power at 985nm for 9.7W incident pump power at 808nm.
© 2008 Optical Society of America
M. Castaing, F. Balembois, P. Georges, T. Georges, K. Schaffers, and J. Tassano, "Yb:SFAP Crystal, Intracavity and Indirectly Diode-Pumped at 914 nm, for a cw Laser Emission at 985 nm," in Advanced Solid-State Photonics, OSA Technical Digest Series (CD) (Optical Society of America, 2008), paper WE36.
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