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Conference Paper
Advanced Solid-State Photonics
Nara Japan
January 27-30, 2008
ISBN: 1-55752-850-0
Poster Session III (WE)

Yb:SFAP Crystal, Intracavity and Indirectly Diode-Pumped at 914 nm, for a cw Laser Emission at 985 nm

Marc Castaing, Francois Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, and John Tassano

http://dx.doi.org/10.1364/ASSP.2008.WE36


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Abstract

We present the first experiment of intracavity pumping at 914nm of an Yb:S-FAP crystal emitting at 985nm on the three-level-laser transition. We obtained 250mW output power at 985nm for 9.7W incident pump power at 808nm.

© 2008 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3615) Lasers and laser optics : Lasers, ytterbium

Citation
M. Castaing, F. Balembois, P. Georges, T. Georges, K. Schaffers, and J. Tassano, "Yb:SFAP Crystal, Intracavity and Indirectly Diode-Pumped at 914 nm, for a cw Laser Emission at 985 nm," in Advanced Solid-State Photonics, OSA Technical Digest Series (CD) (Optical Society of America, 2008), paper WE36.
http://www.opticsinfobase.org/abstract.cfm?URI=ASSP-2008-WE36


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