A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal surfaces. As a pumping source, 1-W GaN laser-diode was used.
© 2011 OSA
M. Fibrich, H. Jelínková, J. Šulc, K. Nejezchleb, and V. Škoda, "Pr:YAlO3 microchip laser at 662 nm," in Advances in Optical Materials, OSA Technical Digest (CD) (Optical Society of America, 2011), paper ATuB29.