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Pr:YAlO3 microchip laser at 662 nm

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Abstract

A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal surfaces. As a pumping source, 1-W GaN laser-diode was used.

© 2011 Optical Society of America

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