Abstract
Femtosecond pulsed laser deposition of Si(100) homoepitaxy is studied by in-situ reflection high-energy electron diffraction and ex-situ atomic force microscopy. Step flow occurs on the reconstructed Si(100)-2×1, while Volmer-Weber growth occurs on the non-reconstructed surface. ©2003 Optical Society of America
© 2003 Optical Society of America
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