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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CMV2

100 nm-Level Air Holes Machined with Laser Direct Writing Method

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Abstract

Frequency-tripled Ti:Sapphire femtosecond laser beams (258 nm) were used to machine Si-on-SiO2 substrates. We report that air holes with diameters as small as 120 nm in Si-on-SiO2 wafers were obtained by laser direct ablation with only conventional optics in air. We believe that these are the smallest ablation features fabricated with laser direct writing method.

© 2003 Optical Society of America

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