Abstract
Frequency-tripled Ti:Sapphire femtosecond laser beams (258 nm) were used to machine Si-on-SiO2 substrates. We report that air holes with diameters as small as 120 nm in Si-on-SiO2 wafers were obtained by laser direct ablation with only conventional optics in air. We believe that these are the smallest ablation features fabricated with laser direct writing method.
© 2003 Optical Society of America
PDF ArticleMore Like This
M. El-Bandrawy and Mool C. Gupta
CFF7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003
Jun Ren, Sergei S. Orlov, and Lambertus Hesselink
ThP2 Frontiers in Optics (FiO) 2003
Z.L. Duan, J.P. Chen, X.H Xie, Z.B. Fang, L.H. Lin, and Z.Z. Xu
CThB6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003