Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CThT1

The effect of barrier materials on the band lineup in 1.3µm GaAsSb QW heterostructures grown by MOCVD

Not Accessible

Your library or personal account may give you access

Abstract

We report on the growth and characterization of GaAsSb QW heterostructures with various barrier materials grown by MOCVD. Using LT cathodoluminescence, we determined the band lineups of heterostructures between GaAsSb QW and various barrier materials. We observed strong PL emission from Type-I band lineup heterostructure.

© 2003 Optical Society of America

PDF Article
More Like This
1.3μm Electroluminescence from MOCVD-Grown Quantum Dots

P.S. Wong, Y. Xin, S. Birudavolu, A. A. El-Emawy, D.L. Huffaker, and H. Xu
CThI7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003

Strain compensated GaAsP/GaAsSb/GaAs 1.3 µm lasers grown on GaAs using MBE

Z.B. Chen, S.R. Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang, Y. Cao, S. Yu, and Y.-H. Zhang
CTuO4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

GaAsSb Quantum Well for 980nm Laser Diode

Hirotatsu Ishii, Mikihiro Yokozeki, Masayuki Iwami, and Akihiko Kasukawa
TuB3 Optical Amplifiers and Their Applications (OAA) 2003

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.