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Conferences > CLEO > 2003 > CTuH > CTuH1
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CTuH1

Novel electronic and optoelectronic properties of GaInNAs and related alloys

Eoin P. O’Reilly, S. Fahy, A. Lindsay, S. Tomić, R. Fehse, A.R. Adams, S.J. Sweeney, A.D. Andreev, P.J. Klar, H. Grüning, and H. Riechert

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Abstract

We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 µm vertical emitting lasers.

© 2003 Optical Society of America

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