InGaSb ternary material for 2 µm detectors

Tamer F. Refaat; M. Nurul Abedin; Upendra N. Singh; Bruce W. Barnes

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CWA17

InGaSb ternary material for 2 µm detectors

Tamer F. Refaat, M. Nurul Abedin, Upendra N. Singh, and Bruce W. Barnes

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

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CLEO Poster Session II (CWA)

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T. F. Refaat, M. N. Abedin, U. N. Singh, and B. W. Barnes, "InGaSb ternary material for 2 µm detectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CWA17.

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Abstract

InGaSb detectors were characterized for future development of two micron avalanche photodiodes. High quantum efficiency and low noise current were observed with relatively large areas devices, indicating ideal material choice for remote sensing applications.

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