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Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
Low Dimensional Semiconductor Materials and Devices (CThF)

Pulsed light absorption induced quantum well intermixing on InGaAsP/InGaAsP MQW using 532 nm irradiation

Song-Ho Cho, Rajeev J. Ram, Danil S. Byun, and Ryan L. Thom

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Pulsed light absorption at 532 nm induces and achieves 45 nm blue-shifts of the bandgap but no shift at 1064 nm, when with maximal fluences of 125 mJ/cm2.

© 2004 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3990) Optical devices : Micro-optical devices
(250.0250) Optoelectronics : Optoelectronics
(250.3140) Optoelectronics : Integrated optoelectronic circuits

S. Cho, R. J. Ram, D. S. Byun, and R. L. Thom, "Pulsed light absorption induced quantum well intermixing on InGaAsP/InGaAsP MQW using 532 nm irradiation," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CThF5.

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