Integrated semiconductor ring lasers with 1-cm cavity length are fabricated and characterized. Directional switching is observed and a pumped S-section is used to suppress it. The lasing threshold is identified by differential I-V measurements.
© 2004 Optical Society of America
H. Cao, H. Ling, C. Liu, H. Deng, Y. Li, P. G. Eliseev, M. Osinski, and G. M. Peake, "Semiconductor ring lasers with large ring cavity: Directional switching and electrical diagnostics," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CThL2.
References are not available for this paper.