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Optics InfoBase > Conference Papers > CLEO > 2004 > CThN > Page CThN6 © 2004 OSA

Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
Laser Sensing (CThN)

High sensitivity silicon-based VIS/NIR photodetectors

James E. Carey and Eric Mazur

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Abstract

We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PIN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.

© 2004 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.3060) Detectors : Infrared
(040.6040) Detectors : Silicon

Citation
J. E. Carey and E. Mazur, "High sensitivity silicon-based VIS/NIR photodetectors," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CThN6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2004-CThN6

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