Abstract
The demand for higher bandwidth has created a need for fiber optics in a wide variety of applications [1]. For bi-directional communications, many of these fiber optic communication systems use two optical fibers. To simplify the network and reduce costs, it is possible to provide bi-directional communications over a single fiber [2], which is widely implemented in Japan. Methods of realizing bi-directional communication on a single fiber include using a single optoelectronic device for emission and detection (compromises the performance of the device for either function), or using a splitter (increases the system cost). In this paper, we demonstrate the stacking of a GaAs-based thin film emitter directly on top of a InGaAs-based thin film photodetector which is integrated directly onto a Si CMOS transceiver circuit. This is the first demonstration of a mixed material 3D thin film device stack, and the first demonstration of such a 3D device stack integrated onto a Si CMOS integrated circuit.
© 2004 Optical Society of America
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