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Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
High-Power Semiconductor Lasers (CTuC)

A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32μm.

Scott Alexander. Smith, John-Mark Hopkins, Handong D. Sun, David Burns, Stephane Calvez, Martin David. Dawson, Tomi Jouhti, Janne Konttinen, and Markus Pessa

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Abstract

We report the first high-power vertical external-cavity surface-emitting laser operating at 1.3μm. Continuous-wave output power greater than 0.6W was achieved using a GaInNAs/GaAs structure capillary-bonded to a single-crystal diamond heatspreader.

© 2004 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(250.0250) Optoelectronics : Optoelectronics
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

Citation
S. A. Smith, J. Hopkins, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, J. Konttinen, and M. Pessa, "A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32μm.," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CTuC5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2004-CTuC5


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