We demonstrate that micromachining multiple quantum wells produces lateral (in-plane) modifications to the semiconductor band structure that are accurately modeled by finite-element analysis combined with an eight-level band-structure calculation.
© 2004 Optical Society of America
T. H. Stievater, W. S. Rabinovich, D. Park, P. G. Goetz, J. B. Boos, D. S. Katzer, and M. L. Biermann, "Lateral band-structure engineering in micromachined semiconductors," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CTuF5.
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