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Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
Dilute Nitride Lasers (CTuJ)

GaInNAsSb/GaNAs VCSELs at 1.46µm

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris

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Abstract

We present electrically pumped GaInNAsSb VCSELs at 1.46µm, the longest wavelength on GaAs to date. At -20C, pulsed at 0.1% duty cycle, the threshold current density was 4.5kA/cm2, with a peak output power of 0.77mW.

© 2004 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers
(310.0310) Thin films : Thin films
(310.3840) Thin films : Materials and process characterization

Citation
M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaNAs VCSELs at 1.46µm," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CTuJ3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2004-CTuJ3


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