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Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
CLEO Poster Session I (CTuP)

Electrical characteristics of highly strained InGaAs/ InAlAs 2μm quantum cascade light-emitting devices

Sharmila Banerjee, Keith Alan. Shore, Colin J. Mitchell, Jonathan L. Sly, and Mo Missous

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Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain–compensated InxGa1-xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.

© 2004 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

S. Banerjee, K. A. Shore, C. J. Mitchell, J. L. Sly, and M. Missous, "Electrical characteristics of highly strained InGaAs/ InAlAs 2μm quantum cascade light-emitting devices," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CTuP4.

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