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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuP4

Electrical Characteristics of Highly Strained InGaAs/ InAlAs 2μm Quantum Cascade Light -Emitting Devices

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Abstract

Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGa1−xAs/InyAl1−yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.

© 2004 Optical Society of America

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