Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain–compensated InxGa1-xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.
© 2004 Optical Society of America
S. Banerjee, K. A. Shore, C. J. Mitchell, J. L. Sly, and M. Missous, "Electrical characteristics of highly strained InGaAs/ InAlAs 2μm quantum cascade light-emitting devices," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CTuP4.
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