OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2004 > CWA > Page CWA29 © 2004 OSA

Conference Paper
Conference on Lasers and Electro-Optics
San Francisco, California United States
May 16, 2004
ISBN: 1-55752-770-9
CLEO Poster Session II (CWA)

Improvement of high power and high current operation of GaN light emitting diodes by laser lift-off technique

Fang-I Lai, Chen-Fu Chu, Jung-Tang Chu, Chang-Chin Yu, Chia-Feng Lin, Hao-Chung Kuo, and S. C. Wang

View Full Text Article

Acrobat PDF (66 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


We have demonstrated the high operation current up to 400 mA for the laser lift-off InGaN/GaN LEDs on Cu heat sink with 3.5 fold increase in the light output power over the regular LEDs.

© 2004 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

F. Lai, C. Chu, J. Chu, C. Yu, C. Lin, H. Kuo, and S. C. Wang, "Improvement of high power and high current operation of GaN light emitting diodes by laser lift-off technique," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper CWA29.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited