Abstract
We present room temperature photoluminescence studies of InGaAs single quantum wells grown on top of In0→xGa1→(1−x)As graded buffers (0.05<×<0.25), with InGaAs and InAlGaAs barriers. Emission was improved 30 times by rapid thermal annealing.
© 2004 Optical Society of America
PDF ArticleMore Like This
C. H. Molloy, X. Chen, D. A. Woolf, D. J. Somerford, and P. Blood
CTuF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995
H. C. Chui, S. M. Lord, J. S. Harris, and M. M. Fejer
QWB.6 Quantum Optoelectronics (QOE) 1993
D.E. Ackley, C. Colvard, H. Lee, and N. Nouri
TuE5 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989