Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CWA44

Room temperature photoluminescence of MBE grown single quantum wells on InGaAs graded buffers

Not Accessible

Your library or personal account may give you access

Abstract

We present room temperature photoluminescence studies of InGaAs single quantum wells grown on top of In0→xGa1→(1−x)As graded buffers (0.05<×<0.25), with InGaAs and InAlGaAs barriers. Emission was improved 30 times by rapid thermal annealing.

© 2004 Optical Society of America

PDF Article
More Like This
Time-resolved photoluminescence of piezoelectric InGaAs/GaAs single quantum wells grown by MBE

C. H. Molloy, X. Chen, D. A. Woolf, D. J. Somerford, and P. Blood
CTuF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Intersubband Transitions in High Indium Content InGaAs / AlGaAs Quantum Wells Grown on GaAs with a Graded InGaAs Buffer

H. C. Chui, S. M. Lord, J. S. Harris, and M. M. Fejer
QWB.6 Quantum Optoelectronics (QOE) 1993

Excitonic Behavior in Pseudomorphic InGaAs/(Al)GaAs Quantum Wells Grown by Mbe

D.E. Ackley, C. Colvard, H. Lee, and N. Nouri
TuE5 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved