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Optics InfoBase > Conference Papers > CLEO > 2005 > CFD > Page CFD4 © 2005 OSA

Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Mid-IR and THz Techniques (CFD)

Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope

Masatsugu Yamashita, Kodo Kawase, Chiko Otani, Kiyoshi Nikawa, and Masayoshi Tonouchi

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Abstract

MOSFETs having damaged interconnection lines have been measured by laser THz-emission microscope under zero bias condition. The polarity reversal in the THz emission waveforms from damaged MOSFETs compared with normal MOSFETs were observed.

© 2005 Optical Society of America

OCIS Codes
(110.0110) Imaging systems : Imaging systems
(110.3080) Imaging systems : Infrared imaging
(180.0180) Microscopy : Microscopy
(180.5810) Microscopy : Scanning microscopy

Citation
M. Yamashita, K. Kawase, C. Otani, K. Nikawa, and M. Tonouchi, "Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFD4.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFD4

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