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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Near Infared Semiconductor Materials and Devices (CFE)

Observation of Anomalously Large Band-Filling Effects in InAs/GaSb Type-II Superlattices: From 2-D to 3-D

Xiaodong Mu, Yujie J. Ding, and John Little

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Abstract

We have demonstrated that type-II InAs/GaSb superlattices exhibit anomalously strong band-filling effects. By varying the width of the barrier or well, we have investigated the effects from 2-D quantum wells to quasi-3-D superlattices.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
X. Mu, Y. J. Ding, and J. Little, "Observation of Anomalously Large Band-Filling Effects in InAs/GaSb Type-II Superlattices: From 2-D to 3-D," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE1.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFE1


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