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Conferences > CLEO > 2005 > CFE > CFE4
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CFE4

Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

Lifang Xu, D. Patel, G. Vaschenko, O. Antón C.S. Menoni, Jeng-Ya Yeh, Tod T. Van Roy, L. J. Mawst, and Nelson Tansu

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Abstract

A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below ~ 150 K. At higher temperatures defect recombination plays a dominant role.

© 2005 Optical Society of America

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