Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.
© 2005 Optical Society of America
Y. Kuo, X. Yu, J. Fu, T. I. Kamins, G. S. Solomon, and J. S. Harris, "Growth and Characterization of SiGe Layers on Ge-Lattice-Matched Substrates by MBE for Long Wavelength Optical Devices," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE5.
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