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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Near Infared Semiconductor Materials and Devices (CFE)

Growth and Characterization of SiGe Layers on Ge-Lattice-Matched Substrates by MBE for Long Wavelength Optical Devices

Yu-Hsuan Kuo, Xiaojun Yu, Junxian Fu, Theodore I. Kamins, Glenn S. Solomon, and James S. Harris

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Abstract

Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
Y. Kuo, X. Yu, J. Fu, T. I. Kamins, G. S. Solomon, and J. S. Harris, "Growth and Characterization of SiGe Layers on Ge-Lattice-Matched Substrates by MBE for Long Wavelength Optical Devices," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFE5


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