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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Near Infared Semiconductor Materials and Devices (CFE)

Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD

Linus C. Chuang, Nobuhiko P. Kobayashi, Eui-Tae Kim, Connie J. Chang-Hasnain, Tev Kuykendall, Don Sirbuly, and Peidong Yang

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Abstract

We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350~430°C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials

Citation
L. C. Chuang, N. P. Kobayashi, E. Kim, C. J. Chang-Hasnain, T. Kuykendall, D. Sirbuly, and P. Yang, "Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFE6


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