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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CFE6

Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD

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Abstract

We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350~430°C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.

© 2005 Optical Society of America

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