We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350~430°C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.
© 2005 Optical Society of America
L. C. Chuang, N. P. Kobayashi, E. Kim, C. J. Chang-Hasnain, T. Kuykendall, D. Sirbuly, and P. Yang, "Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE6.
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