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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Near Infared Semiconductor Materials and Devices (CFE)

Exciton Recycling in Graded Gap Layer-by-Layer Semiconductor Nanocrystal Structures

Thomas Franzl, Thomas A. Klar, Stefan Schietinger, Andrey L. Rogach, and Jochen Feldmann

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Abstract

A funnel like band gap profile is realized in a layer-by-layer assembled structure of CdTe nanocrystals. Recycling of trapped excitons leads to efficient energy transfer along the band gap gradient.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.4670) Materials : Optical materials
(260.0260) Physical optics : Physical optics
(260.2160) Physical optics : Energy transfer

Citation
T. Franzl, T. A. Klar, S. Schietinger, A. L. Rogach, and J. Feldmann, "Exciton Recycling in Graded Gap Layer-by-Layer Semiconductor Nanocrystal Structures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFE7.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFE7


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