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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Ultrafast Laser Processing (CFG)

Near-Infrared Femtosecond Laser-Processed Thin-Film Transistor

Zun-Hao Chen, Jia-Min Shieh, Bau-Tong Dai, Yi-Chao Wang, and Ci-Ling Pan

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Abstract

Near-infrared (λ ∫ 800 nm) femtosecond laser annealing (FLA) is employed on crystallization and activation of amorphous Si regions of thin film transistors (TFT). The transfer, and output characteristics for FLA-processed TFTs show promising performances.

© 2005 Optical Society of America

OCIS Codes
(320.0320) Ultrafast optics : Ultrafast optics
(320.2250) Ultrafast optics : Femtosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
Z. Chen, J. Shieh, B. Dai, Y. Wang, and C. Pan, "Near-Infrared Femtosecond Laser-Processed Thin-Film Transistor," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CFG7.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CFG7


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