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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Solid-State Lighting and Group III-Nitride LEDs (CMI)

InGaN-Based Quantum-Well LEDs: Explanation of Anomalous Electro-Optical Characteristics

Petr G. Eliseev, Jinhyun Lee, and Marek Osinski

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Abstract

Anomalies of charge transport and luminescence in InGaN-based short-wavelength LEDs (low-temperature quenching of luminescence yield; very large ideality factor of I-V curves) are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
P. G. Eliseev, J. Lee, and M. Osinski, "InGaN-Based Quantum-Well LEDs: Explanation of Anomalous Electro-Optical Characteristics," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CMI3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CMI3


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