OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2005 > CMI > Page CMI4 © 2005 OSA

Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Solid-State Lighting and Group III-Nitride LEDs (CMI)

UVLED Based on Carrier Localization in AlGaN

C. J. Collins, A. V. Sampath, G. A. Garrett, H. Shen, M. Wraback, and R. Readinger

View Full Text Article

Acrobat PDF (356 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.

© 2005 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
C. J. Collins, A. V. Sampath, G. A. Garrett, H. Shen, M. Wraback, and R. Readinger, "UVLED Based on Carrier Localization in AlGaN," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CMI4.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CMI4


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited