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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Solid-State Lighting and Group III-Nitride LEDs (CMI)

UVLED Based on Carrier Localization in AlGaN

C. J. Collins, A. V. Sampath, G. A. Garrett, H. Shen, M. Wraback, and R. Readinger

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AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.

© 2005 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

C. J. Collins, A. V. Sampath, G. A. Garrett, H. Shen, M. Wraback, and R. Readinger, "UVLED Based on Carrier Localization in AlGaN," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CMI4.

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