AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.
© 2005 Optical Society of America
C. J. Collins, A. V. Sampath, G. A. Garrett, H. Shen, M. Wraback, and R. Readinger, "UVLED Based on Carrier Localization in AlGaN," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CMI4.
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