The electric field to invert the domain in Zn-doped near-stoichiometric LiNbO3 varies with Zn concentration. Inversion is accomplished with low field of 1.4kV/mm at 2mol% doping where the optical damage resistance of the crystal enhances.
© 2005 Optical Society of America
S. Kumaragurubaran, S. Takekawa, M. Nakamura, S. Ganesamoorthy, K. Terabe, and K. Kitamura, "Domain Inversion and Optical Damage in Zn Doped Near-Stoichiometric Lithium Niobate Crystal," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CMW2.
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