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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Waveguide Characterization (CThB)

Efficiency Increase of Silicon-on-Insulator Raman Lasers by Reduction of Free-Carrier Absorption in Tapered Waveguides

Michael Krause, Hagen Renner, and Ernst Brinkmeyer

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Abstract

The efficiency of continuous-wave SOI Raman lasers can be increased significantly by using a waveguide with a longitudinally varying (as opposed to a constant) effective area, thus reducing the impact of free-carrier absorption.

© 2005 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3550) Lasers and laser optics : Lasers, Raman
(230.0230) Optical devices : Optical devices
(230.7370) Optical devices : Waveguides

Citation
M. Krause, H. Renner, and E. Brinkmeyer, "Efficiency Increase of Silicon-on-Insulator Raman Lasers by Reduction of Free-Carrier Absorption in Tapered Waveguides," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CThB1.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CThB1


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