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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Ultrafast Switches (CThD)

Monolithic Integration of Electronic and Electro-Optical Devices Exploiting the AlGaN/GaN-LiNbO3 Material System

Shannon M. Madison, Walter Henderson, Gon Namkoong, Kyoung-Keun Lee, Ketan M. Patel, William Alan. Doolittle, and Stephen E. Ralph

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Abstract

The development of the monolithic integration of AlGaN/GaN FETs with LiNbO3 structures for optical signal processing is presented. We also present new III-nitride material growth details and electronic device performance.

© 2005 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.3730) Integrated optics : Lithium niobate
(230.0230) Optical devices : Optical devices
(230.2090) Optical devices : Electro-optical devices

Citation
S. M. Madison, W. Henderson, G. Namkoong, K. Lee, K. M. Patel, W. A. Doolittle, and S. E. Ralph, "Monolithic Integration of Electronic and Electro-Optical Devices Exploiting the AlGaN/GaN-LiNbO3 Material System," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CThD7.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CThD7


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