SiOx nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.
© 2005 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3390) Lasers and laser optics : Laser materials processing
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties
X. Chen and Y. Lu, "Optical Properties of SiOx Nanostructured Films by Pulsed-Laser Deposition," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CThL4.
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