We present a Second-Harmonic Generation study of a set of device quality Si/Hf(1-x)SixO2 interfaces for different x values and annealing treatments. Rotationally-anisotropic, spectroscopic and time-dependent SHG depend strongly on dielectric composition and annealing.
© 2005 Optical Society of America
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(240.0240) Optics at surfaces : Optics at surfaces
(240.4350) Optics at surfaces : Nonlinear optics at surfaces
R. Carriles, J. Kwon, Y. An, J. C. Miller, M. C. Downer, J. Price, and A. C. Diebold, "Second-Harmonic Characterization of Si/Hf(1-x)SixO2 Interfaces," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CTuB4.
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