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Conferences > CLEO > 2005 > CTuF > CTuF5
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CTuF5

Sub-picosecond All-optical Switch with Extinction Ratio of 10 dB utilizing GaN Intersubband Transition

Norio Iizuka, Kei Kaneko, and Nobuo Suzuki

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Abstract

An all-optical gate switch utilizing intersubband transition in GaN/AlN quantum wells was fabricated by MBE re-growth on an MOCVD-grown GaN. The extinction ratio of 10 dB was achieved with the gate width of 240 fs.

© 2005 Optical Society of America

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