We obtained strong near-ultraviolet and blue emissions at RT from In-rich InGaN/GaN MQWs. We believe that use of less than 2-nm-thick In-rich InGaN QW layer can be a new candidate for near-ultraviolet and visible sources.
© 2005 Optical Society of America
S. Kwon, S. Baik, H. J. Kim, D. Ko, Y. Kim, E. Yoon, Y. Park, J. Yoon, and H. M. Cheong, "Strong Near-Ultraviolet and Blue Emissions at Room Temperature from In-Rich InGaN/GaN Multi-Quantum Well Structures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper CWL5.
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